H10F 39/1847
Multispectral infrared image sensors having a stacked structure
Official title: {Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
H10F39/1847 (Multispectral infrared image sensors having a stacked structure) appears on 303 US grants and 294 published applications in this corpus.
Search patents in H10F- Granted patents
- 303
- Published applications
- 294
- Assignees
- 146
- Inventors
- 533
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 6 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 0 |
| 2002 | 4 | 3 |
| 2003 | 9 | 8 |
| 2004 | 2 | 4 |
| 2005 | 4 | 2 |
| 2006 | 4 | 6 |
| 2007 | 5 | 6 |
| 2008 | 3 | 5 |
| 2009 | 3 | 6 |
| 2010 | 7 | 12 |
| 2011 | 8 | 12 |
| 2012 | 6 | 14 |
| 2013 | 19 | 8 |
| 2014 | 12 | 11 |
| 2015 | 8 | 6 |
| 2016 | 15 | 17 |
| 2017 | 19 | 22 |
| 2018 | 24 | 26 |
| 2019 | 23 | 30 |
| 2020 | 19 | 15 |
| 2021 | 26 | 24 |
| 2022 | 21 | 17 |
| 2023 | 18 | 19 |
| 2024 | 13 | 14 |
| 2025 | 11 | 5 |
| 2026 | 5 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Photodiode and manufacturing method thereof28 Jul 2026US 12,696,555 B2Pixart Imaging Inc.
- Stacked multi-spectral image sensor9 Jun 2026US 12,652,871 B2Apple Inc.
- Media for storing multispectral image and fabrication method thereof12 May 2026US 12,628,444 B2UIF (University Industry Foundation), Yonsei University
- Doped semiconductor structure for NIR sensors20 Jan 2026US 12,532,554 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Time-of-flight system and time-of-flight methods6 Jan 2026US 12,517,234 B2Sony Semiconductor Solutions Corporation
- Photodetector and ranging device24 Sep 2026US 2026/0293346 A1Sony Semiconductor Solutions Corporation
- Two-Color Monolithic Infrared nBn Photodetector Array with High-Density Vertically Integrated Photodiode (HDVIP) Architecture21 May 2026US 2026/0143831 A1
- Methods for fabricating a multilevel semiconductor device and structure with image sensors and wafer bonding13 Nov 2025US 2025/0351591 A1Monolithic 3D Inc.
- Doped semiconductor structure for nir sensors6 Nov 2025US 2025/0344524 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cmos rgb-ir sensor with quadruple-well stack structure4 Sep 2025US 2025/0280612 A1Himax Imaging Limited
Most cited
By later US patents
- Integrated IR, visible and NIR sensor and methods of fabricating same325US 5,808,350 ARaytheon Company · 1998
- Digital cameras with direct luminance and chrominance detection208US 7,964,835 B2Protarius Filo AG, L.L.C. · 2011
- Materials, systems and methods for optoelectronic devices107US 7,923,801 B2InVisage Technologies, Inc. · 2011
- Materials, systems and methods for optoelectronic devices67US 8,004,057 B2InVisage Technologies, Inc. · 2011
- CMOS image sensor including superlattice to enhance infrared light absorption58US 10,276,625 B1Atomera Incorporated · 2019