Two-Color Monolithic Infrared nBn Photodetector Array with High-Density Vertically Integrated Photodiode (HDVIP) Architecture
OwnerChristoph H. Grein, Silviu Velicuinventors
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Abstract
A molecular beam epitaxy (MBE)-grown two-color infrared nBn photodetector array integrated within a High-Density Vertically Integrated Photodiode (HDVIP) architecture. The innovative photodetector offers simultaneous detection of two distinct infrared spectral bands with enhanced sensitivity, reduced dark current, and fast response times. This innovative photodetector finds applications in various fields, including thermal imaging, security systems, environmental monitoring, and aerospace technology.
Claims7
A molecular beam epitaxy (MBE)-grown two-color infrared nBn photodetector integrated within a High-Density Vertically Integrated Photodiode (HDVIP) architecture.
An infrared photodetector, comprising:
- a triple material layer structure comprising two copper-doped p-MCT absorber layers with appropriate cutoffs for the two colors of infrared radiation to be detected, such as a lower LWIR-sensing copper-doped p-MCT layer and an upper MWIR-sensing copper-doped p-MCT layer, separated by an electron barrier of an arsenic-doped layer of MCT with an energy gap greater than those of the other two layers, wherein the doping in the electron barrier permit hole current flow from the p-region of the bottom MCT layer to the p-region of the top layer, and subsequently out through the adjacent contact.
Dependencies are inferred from the claim text.