Media for storing multispectral image and fabrication method thereof
AssigneeUIF (University Industry Foundation), Yonsei University
InventorMyeong Kyu Lee
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Abstract
A multispectral image storage device and a method for manufacturing the same are disclosed. The multispectral image storage device includes: a substrate; an infrared image storage layer including: an amorphous GST (Ge2Sb2Te5) thin-film disposed on the substrate; and at least one crystalline GST thin-film received in the amorphous GST thin-film and having a first thickness from an upper surface of the amorphous GST thin-film, wherein the at least one crystalline GST thin-film has a shape corresponding to a first image; and a visible image storage layer including at least one semiconductor pattern disposed on the infrared image storage layer so as to generate a second image based on light of a visible light wavelength.
Claims15
A multispectral image storage device comprising:
- a substrate;
- an infrared image storage layer including:
- an amorphous GST (Ge2Sb2Te5) thin-film disposed on the substrate;
- and
- at least one crystalline GST thin-film received in the amorphous GST thin-film and having a first thickness from an upper surface of the amorphous GST thin-film, wherein the at least one crystalline GST thin-film has a shape corresponding to a first image;
- and
- a visible image storage layer including at least one semiconductor pattern disposed on the infrared image storage layer so as to generate a second image based on light of a visible light wavelength.
A method for manufacturing a multispectral image storage device, the method comprising:
- a first step of deposing an amorphous GST thin-film on a substrate;
- a second step of converting a portion of the amorphous GST thin-film from an upper surface of the amorphous GST thin-film into a crystalline GST thin-film having a first thickness from the upper surface thereof and a shape corresponding to a first image, thereby forming an infrared image storage layer including a remaining portion of the amorphous GST thin-film and the crystalline GST thin-film;
- and
- a third step of deposing, on the infrared image storage layer, a semiconductor thin-film in a patterned manner corresponding to a second image, thereby forming a visible image storage layer, wherein the second image is generated based on light of a visible light wavelength.
Dependencies are inferred from the claim text.