Methods for fabricating a multilevel semiconductor device and structure with image sensors and wafer bonding

A method for fabricating an integrated device, the method comprising:

• forming a first level comprising a first mono-crystal layer,
• wherein forming said first level comprises forming a plurality of single crystal transistors, a plurality of pixel control circuits, and a plurality of metal gate transistors therein;
• disposing an overlying oxide on top of said first level;
• providing a second level comprising a second mono-crystal layer,
• wherein said second mono-crystal layer comprises a plurality of image sensors;
• bonding said second level to said first level via an oxide-to-oxide bond such that said second level overlays said oxide;
• and
• comprising disposing a third level underneath said first level,
• wherein said third level comprises a plurality of third transistors, and
• wherein said plurality of third transistors each comprise a single crystal channel.

A method for fabricating an integrated device, the method comprising:

• forming a first level comprising a first mono-crystal layer,
• wherein forming said first level comprises forming a plurality of single crystal transistors, a plurality of pixel control circuits, and a plurality of recessed channel transistors therein;
• disposing an overlying oxide on top of said first level;
• providing a second level comprising a second mono-crystal layer,
• wherein said second mono-crystal layer comprises a plurality of image sensors;
• aligning said second level to said first level such that said plurality of image sensors are aligned to said plurality of single crystal transistors with a less than 600 nm alignment error;
• bonding said aligned second level to said first level via an oxide-to-oxide bond such that said second level overlays said oxide;
• and
• comprising disposing a third level underneath said first level,
• wherein said third level comprises a plurality of third transistors, and
• wherein said plurality of third transistors each comprise a single crystal channel.