H10F 30/2877
Field-effect phototransistors having pn heterojunction gates
Official title: {Field-effect phototransistors having PN heterojunction gates}
H10F30/2877 (Field-effect phototransistors having pn heterojunction gates) appears on 72 US grants and 75 published applications in this corpus.
Search patents in H10F- Granted patents
- 72
- Published applications
- 75
- Assignees
- 52
- Inventors
- 153
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 2 |
| 2013 | 1 | 1 |
| 2014 | 2 | 2 |
| 2015 | 2 | 2 |
| 2016 | 2 | 6 |
| 2017 | 5 | 12 |
| 2018 | 6 | 1 |
| 2019 | 7 | 10 |
| 2020 | 8 | 5 |
| 2021 | 5 | 8 |
| 2022 | 8 | 10 |
| 2023 | 8 | 5 |
| 2024 | 3 | 5 |
| 2025 | 4 | 4 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Plasmonic field-enhanced photodetector and image sensor using light absorbing layer having split conduction band and valence band26 May 2026US 12,641,910 B2
- Bio-inspired imaging device with in-sensor visual adaptation17 Feb 2026US 12,557,410 B2The Hong Kong Polytechnic University
- Optoelectronic synaptic device including quantum dot(QD)-transition metal chalcogenide(TMD) heterojunction30 Sep 2025US 12,428,595 B2Industry-Academic Cooperation Foundation Gyeongsang National University
- Flexo-electric broadband photo-detectors and electrical energy generators5 Aug 2025US 12,382,733 B2Massachusetts Institute of Technology
- Differential amplifier gated with quantum dots absorbing incident electromagnetic radiation18 Mar 2025US 12,256,576 B2The United States of America as represented by the Secretary of the Navy
- Semiconductor-Graphene Heterojunction Quad-Detectors For Low-Power Laser Alignment16 Apr 2026US 2026/0104252 A1The Regents of the University of Michigan
- Two-dimensional metal/semiconductor/metal device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration, and preparation method thereof11 Dec 2025US 2025/0380516 A1Shanghai Institute of Technical Physics, CAS.
- Group-iii nitride device and preparation method thereof16 Oct 2025US 2025/0324777 A1Anhui University
- Plasmonic field-enhanced photodetector and image sensor22 May 2025US 2025/0169222 A1
- Optoelectronic synaptic device including quantum dot(qd)-transition metal chalcogenide(tmd) heterojunction8 May 2025US 2025/0145884 A1Industry-Academic Cooperation Foundation Gyeongsang National University
Most cited
By later US patents
- Low noise hybridized detector using charge transfer42US 8,860,083 B1Sensors Unlimited, Inc. · 2014
- Photon-effect transistor29US 10,186,626 B2Forwarding Technology LTD · 2019
- Optical sensor26US 6,194,740 B1Semiconductor Energy Laboratory Co.Ltd. · 2001
- High electron mobility heterojunction semiconductor devices22US 4,734,750 AFujitsu Limited · 1988
- Semiconductor chip having tampering feature20US 9,553,056 B1International Business Machines Corporation · 2017