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US 12,641,910 B2Granted
Plasmonic field-enhanced photodetector and image sensor using light absorbing layer having split conduction band and valence band
OwnerHoon Kiminventor
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Abstract
A plasmonic field-enhanced photodetector is disclosed. The photodetector absorbs surface plasmon polaritons (SPPs) by using a light absorbing layer having a conduction band and a valence band in which an energy is split, the SPPs being generated by combining surface plasmons (SPs) with photons of a light wave, and generates photocurrent based on the absorbed SPPs.
Claims13
A photodetector comprising:
- a metal layer to shield incident light and generate surface plasmon polaritons (SPPs);
- an insulator;
- a light absorbing layer to absorb the generated SPPs and allow charges excited by the SPPs and a localized electric field effect to tunnel through the insulator;
- a dielectric formed at nanoholes in which at least a part of the metal layer is opened;
- and
- a semiconductor layer to induce a photocurrent based on an electric field of the tunneled charges,
- wherein the SPPs form localized electric field at an interface where the metal layer meets the dielectric,
- wherein the localized electric field of the absorbed SPPs and tunneling of charges excited by photons of light induces the photocurrent, and
- wherein the SPPs are absorbed into the semiconductor layer by using the light absorbing layer having a conduction band and a valence band in which an energy is split.
6 more elements
An image sensor comprising:
- a metal surface to shield incident light and generate surface plasmon polaritons (SPPs);
- a metal nanohole array formed on the metal surface;
- an insulator;
- and
- a detector array formed at a position corresponding to the metal nanohole array, wherein the detector array comprises:
- a light absorbing layer to absorb the generated SPPs and allow charges excited by the SPPs and a localized electric field effect to tunnel through the insulator;
- a dielectric formed at the metal nanohole array in which at least a part of the metal layer is opened;
- and
- a semiconductor layer to induce a photocurrent based on an electric field of the tunneled charges,
- wherein the SPPs form localized electric field at an interface where the metal surface meets the dielectric,
- wherein the metal surface is extended from a surface to the light absorbing layer and guides the generated SPPs to be transmitted to the light absorbing layer, and
- wherein the detector array absorbs the SPPs into the semiconductor layer by using the light absorbing layer having a conduction band and a valence band in which an energy is split.
9 more elements
Dependencies are inferred from the claim text.