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US 8,860,083 B1Granted
Low noise hybridized detector using charge transfer
AssigneeSensors Unlimited, Inc.
InventorJohn Alfred Trezza
Life of this patent
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Abstract
A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells.
Claims16
An infrared photodetector comprising:
- a first small bandgap layer of first conductivity type;
- a first large bandgap layer of first conductivity type overlying the first small bandgap layer of first conductivity type;
- a collection well of second conductivity type in the first large bandgap layer and in contact with the first small bandgap layer so that the first small bandgap layer and the collection well form an infrared photodiode;
- a transfer well of second conductivity type in the first large bandgap layer and spaced from the collection well and the first small bandgap layer;
- and
- a transistor that includes the collection well, the transfer well and a region between the collection well and the transfer well.
3 more elements
An infrared photodetector comprising:
- a first small bandgap layer of first conductivity type;
- a first large bandgap layer of first conductivity type on the first small bandgap layer of first conductivity type;
- a second large bandgap layer of first conductivity type on the first large bandgap layer;
- a second small bandgap layer on the second large bandgap layer;
- a collection well of second conductivity type located in the first small bandgap layer and first large bandgap layer;
- a transfer well of second conductivity type located in the first large bandgap layer;
- and
- electrodes on the second small bandgap layer positioned to cause transfer of charge from the collection well to the transfer well.
5 more elements
Dependencies are inferred from the claim text.