US 4,734,750 A · High electron mobility heterojunction semiconductor devices

Abstract

High electron mobility heterojunction semiconductor devices provided with a means to cause exposure of the electron source layer thereof to an electromagnetic wave allows modulation, adjustment and the like of the characteristics thereof even after completion of the production thereof, thus realizing a considerable magnitude of flexibility in the characteristics as well as considerably different modes in various embodiments, including field effect transistors which allow modulation of threshold voltage etc., connection channels or capacitors having a smaller resistance, programmable memory devices, image sensors. In addition, the high electron mobility heterojunction semiconductor devices can have a much higher operation speed than those available in the prior art.

Claims8

Dependent claims

A high electron mobility heterojunction semiconductor device comprising:

a pair of layers including an electron source layer and a channel layer for providing a heterojunction therebetween, said channel layer having an electron affinity larger than that of said electron source layer, said pair of layers being arranged for exposing at least one portion thereof to an electromagnetic wave;
and
a container for holding said pair of layers at a sufficiently low temperature for maintaining an electron gas which forms in said channel layer adjacent the heterojunction, said electron source layer containing substantially no impurities and said channel layer containing substantially no impurities, and the device characteristics can be changed as a result of the surface density of said electron gas being changed by exposure to said electromagnetic wave.

Dependencies are inferred from the claim text.

High electron mobility heterojunction semiconductor devices

Life of this patent

High electron mobility heterojunction semiconductor devices

Life of this patent

Abstract

Claims8