H10F 30/2275
Being a metal-semiconductor-metal [msm] schottky barrier
Official title: {being a metal-semiconductor-metal [MSM] Schottky barrier}
H10F30/2275 (Being a metal-semiconductor-metal [msm] schottky barrier) appears on 207 US grants and 202 published applications in this corpus.
Search patents in H10F- Granted patents
- 207
- Published applications
- 202
- Assignees
- 168
- Inventors
- 576
- Latest grant
- 20 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 6 | 0 |
| 1996 | 5 | 0 |
| 1997 | 6 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 0 |
| 2002 | 1 | 3 |
| 2003 | 3 | 4 |
| 2004 | 5 | 3 |
| 2005 | 1 | 16 |
| 2006 | 7 | 9 |
| 2007 | 6 | 13 |
| 2008 | 4 | 7 |
| 2009 | 4 | 6 |
| 2010 | 10 | 10 |
| 2011 | 11 | 12 |
| 2012 | 7 | 16 |
| 2013 | 14 | 7 |
| 2014 | 16 | 13 |
| 2015 | 12 | 15 |
| 2016 | 5 | 2 |
| 2017 | 7 | 4 |
| 2018 | 7 | 9 |
| 2019 | 11 | 10 |
| 2020 | 5 | 8 |
| 2021 | 10 | 8 |
| 2022 | 5 | 5 |
| 2023 | 4 | 5 |
| 2024 | 4 | 5 |
| 2025 | 3 | 9 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Doped aluminum-alloyed gallium oxide and ohmic contacts20 Jan 2026US 12,532,530 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Photodiode and image sensor including the same13 Jan 2026US 12,527,097 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing semiconductor device2 Dec 2025US 12,488,988 B2Hamamatsu Photonics K.K.
- Thin-film sensor and method of fabricating thin-film sensor2 Dec 2025US 12,490,571 B2King Khalid University, RCAMS
- Tritium detection devices and methods of making and use thereof7 Oct 2025US 12,439,705 B2Ohio State Innovation Foundation
- Two-dimensional photosensor and manufacturing method of two-dimensional photosensor17 Sep 2026US 2026/0282566 A1Kepler, Ltd.
- Ferroelectric iii-nitride alloy-based photodetectors10 Sep 2026US 2026/0271411 A1The Regents of the University of Michigan
- Method and device for fabricating photodetector9 Apr 2026US 2026/0101605 A1The Director General, Centre for Materials for Electronics Technology (C-Met)
- Two-dimensional metal/semiconductor/metal device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration, and preparation method thereof11 Dec 2025US 2025/0380516 A1Shanghai Institute of Technical Physics, CAS.
- Integrated Configurable Photodetector with Ultra-High Circular Polarization Extinction Ratio and Preparation Method Therefor4 Dec 2025US 2025/0374706 A1Shanghai Institute of Technical Physics, CAS.
Most cited
By later US patents
- Active short-wave infrared four-dimensional camera167US 10,007,001 B1Luminar Technologies, Inc. · 2018
- Method of making a compound semiconductor having metallic inclusions146US 5,471,948 AInternational Business Machines Corporation · 1995
- Compound semiconductor having metallic inclusions and devices fabricated therefrom139US 5,371,399 AInternational Business Machines Corporation · 1994
- Dielectric passivation for semiconductor devices83US 7,332,795 B2Cree, Inc. · 2008
- Inelastic tunnel diodes70US 4,482,779 AThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration · 1984