Tritium detection devices and methods of making and use thereof

A tritium detection device comprising:

• a tritium detection region comprising:
• a tritium absorption layer;
• and
• an anti-diffusion layer;
• a Schottky contact region comprising a Schottky contact layer;
• a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor;
• an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor;
• and
• an Ohmic contact layer;
• wherein the epitaxial semiconductor layer is disposed on top of and in physical contact with the semiconductor layer;
• wherein the tritium detection region covers a first portion of the epitaxial semiconductor layer and the Schottky contact region covers a second portion of the epitaxial semiconductor layer;
• wherein the anti-diffusion layer is disposed on top of and in physical contact with the first portion of the epitaxial semiconductor layer;
• wherein the tritium absorption layer is disposed on top of and in physical contact with the anti-diffusion layer, such that the anti-diffusion layer is disposed between and in physical contact with the tritium absorption layer and the epitaxial semiconductor layer;
• wherein the Schottky contact layer is disposed on top of and in physical contact with the second portion of the epitaxial semiconductor layer;
• wherein the first portion of the epitaxial semiconductor layer is adjacent to the second portion of the epitaxial semiconductor layer, such that the Schottky contact region is disposed adjacent to the tritium detection region on the epitaxial semiconductor layer;
• and
• wherein the Ohmic contact layer is disposed below and in physical contact with the semiconductor layer, such that the semiconductor layer is disposed between and in physical contact with the epitaxial semiconductor layer and the Ohmic contact layer.