Back to results
US 12,527,097 B2Granted
Photodiode and image sensor including the same
AssigneeSamsung Electronics Co., Ltd.
InventorChan-Wook Baik
Life of this patent
Estimating the term…
Abstract
A photodiode according to an embodiment includes a semiconductor substrate, a Schottky junction structure layer disposed on the semiconductor substrate and including a first layer including a conductive material and a semiconductor layer, and a pinning layer disposed adjacent to the Schottky junction structure layer and fixing potentials of the semiconductor substrate and the first layer.
Claims20
A photodiode comprising:
- a semiconductor substrate;
- a Schottky junction structure layer arranged on the semiconductor substrate, the Schottky junction structure layer including a first layer including a conductive material and a semiconductor layer;
- and
- a pinning layer disposed adjacent to the Schottky junction structure layer, the pinning layer fixing potentials of the semiconductor substrate and the first layer.
1 more element
An image sensor comprising:
- a photodiode comprising a semiconductor substrate, a Schottky junction structure layer arranged on the semiconductor substrate, the Schottky junction structure layer including a first layer including a conductive material and a semiconductor layer, and a pinning layer disposed adjacent to the Schottky junction structure layer, the pinning layer fixing potentials of the semiconductor substrate and the first layer;
- and
- at least one transistor for controlling an electrical signal generated by the photodiode.
Dependencies are inferred from the claim text.