H01S 5/3004
Employing a field effect structure for inducing charge-carriers
Official title: {employing a field effect structure for inducing charge-carriers, e.g. FET}
H01S5/3004 (Employing a field effect structure for inducing charge-carriers) appears on 18 US grants and 18 published applications in this corpus.
Search patents in H01S- Granted patents
- 18
- Published applications
- 18
- Assignees
- 23
- Inventors
- 50
- Latest grant
- 31 Aug 2021
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 2 |
| 2005 | 2 | 1 |
| 2006 | 0 | 3 |
| 2007 | 1 | 1 |
| 2008 | 0 | 2 |
| 2009 | 2 | 2 |
| 2010 | 3 | 2 |
| 2011 | 1 | 1 |
| 2012 | 1 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 1 | 1 |
| 2019 | 0 | 1 |
| 2020 | 1 | 1 |
| 2021 | 1 | 0 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
Recent patents
- Dense wavelength division multiplexing (DWDM) photonic integration platform31 Aug 2021US 11,105,988 B2Hewlett Packard Enterprise Development LP
- Non-equilibrium polaronic quantum phase-condensate based electrical devices25 Aug 2020US 10,752,513 B2Polaronix Corporation
- Integrated circuit implementing a VCSEL array or VCSEL device30 Oct 2018US 10,116,115 B2
- Optoelectronic devices9 Feb 2016US 9,257,666 B2Cambridge Enterprise Limited
- 6.1 angstrom III-V and II-VI semiconductor platform18 Nov 2014US 8,891,573 B2Arizona Board of Regents
- Dense wavelength division multiplexing (dwdm) photonic integration platform31 Dec 2020US 2020/0409001 A1Hewlett Packard Enterprise Development LP
- Non-equilibrium polaronic quantum phase-condensate based electrical devices26 Dec 2019US 2019/0389739 A1Neqcst Corporation
- Integrated Circuit Implementing a VCSEL Array or VCSEL Device23 Aug 2018US 2018/0241173 A1INTOP Corp.
- 6.1 angstrom iii-v and ii-vi semiconductor platform14 Nov 2013US 2013/0301668 A1Arizona Board of Regents
- Optoelectronic Devices22 Sep 2011US 2011/0229073 A1Cambridge Enterprise Limited
Most cited
By later US patents
- Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation41US 6,841,795 B2Opel, Inc. · 2005
- Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay37US 6,954,473 B2Opel, Inc. · 2005
- Dense wavelength division multiplexing (DWDM) photonic integration platform17US 11,105,988 B2Hewlett Packard Enterprise Development LP · 2021
- Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation14US 7,173,293 B2Opel, Inc. · 2007
- Integrated circuit employing low loss spot-size converter10US 7,551,826 B2Opel, Inc. · 2009