Optoelectronic Devices
AssigneeCambridge Enterprise Limited
InventorsHenning Sirringhaus, Michael C. Gwinner, Harald Geissen, Heinz Schweizer
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AssigneeCambridge Enterprise Limited
InventorsHenning Sirringhaus, Michael C. Gwinner, Harald Geissen, Heinz Schweizer
Estimating the term…
The present invention relates integrated optoelectronic devices comprising light emitting field-effect transistors. We describe an optoelectronic device comprising a light-emitting field effect transistor (LFET) with an organic semiconductor active layer and a waveguide integrated within the channel of the light-emitting field effect transistor, wherein said waveguide comprises a material which has a higher refractive index than said organic semiconductor. We also describe a light-emitting organic field transistor integrated with a ridge or rib waveguide incorporated within the channel of the LFET; and a similar light-emitting organic field effect transistor in which the waveguide incorporates an optical feedback mechanism.
An optoelectronic device comprising a light-emitting field transistor (LFET) with an organic semiconductor active layer and a waveguide integrated within the channel of the light-emitting field-effect transistor, wherein said waveguide comprises a material which has a higher refractive index than said organic semiconductor.
A light-emitting organic field transistor (LFET) integrated with a ridge or rib waveguide incorporated within a channel of the LFET.
A semiconductor laser comprising a light-emitting field effect transistor (LFET), the LFET having a channel which, in operation, conducts charge carriers of two types of opposite polarity, a waveguide optically coupled to said channel of said LFET, and a light reflector configured to provide an optical cavity for said laser.
A method of coupling light into a waveguide, using a light-emitting field effect transistor (LFET), the LFET having a channel conducting charge carriers of two types of opposite polarity, the method comprising providing a said waveguide adjacent or within the channel of the LFET, and biasing the LFET to control a location of recombination of said opposite polarity charge carriers such that light from said recombination is coupled into said waveguide.
An optoelectronic integrated circuit comprising a substrate bearing a light-emitting field effect transistor (LFET) in which a channel of said field effect transistor incorporates a waveguide.
Dependencies are inferred from the claim text.