Integrated Circuit Implementing a VCSEL Array or VCSEL Device

A semiconductor device comprising:

• a plurality of vertical-cavity surface-emitting laser (VCSEL) devices arranged in a two-dimensional array, wherein the plurality of VCSEL devices is formed from a layer structure that includes at least one bottom n-type layer, at least one intermediate p-type layer formed above the at least one bottom n-type layer, an n-type modulation doped quantum well structure formed above the at least one intermediate p-type layer, at least one spacer layer formed between the at least one intermediate p-type layer and the n-type modulation doped quantum well structure, and at least one top p-type layer formed above the n-type modulation doped quantum well structure;
• an annealed oxygen implant region disposed vertically in the layer structure within the at least one spacer layer and configured to surround and extend laterally in a continuous manner between the plurality of VCSEL devices;
• an annealed n-type ion implant region disposed vertically in the layer structure within the top p-type spacer layer and configured to overlie the annealed oxygen implant region and surround and extend laterally in a continuous manner between the plurality of VCSEL devices;
• a common anode that contacts the at least one top p-type layer;
• and
• a common cathode that contacts the at least one bottom n-type layer;
• wherein the at least one intermediate p-type layer has a built-in hole charge Qp, the at least one bottom n-type layer has a built-in electron charge Qn, and the built-in hole charge Qp relative to the built-in electron charge Qn is configured for diode current-voltage characteristics of the plurality of VCSEL devices based on voltages applied to the common anode and the common cathode.