US 9,257,666 B2 · Optoelectronic devices

Abstract

The present invention relates integrated optoelectronic devices comprising light emitting field-effect transistors. We describe an optoelectronic device comprising a light-emitting field effect transistor (LFET) with an organic semiconductor active layer and a waveguide integrated within the channel of the light-emitting field effect transistor, wherein said waveguide comprises a material which has a higher refractive index than said organic semiconductor. We also describe a light-emitting organic field transistor integrated with a ridge or rib waveguide incorporated within the channel of the LFET; and a similar light-emitting organic field effect transistor in which the waveguide incorporates an optical feedback mechanism.

Claims17

Dependent claims

An optoelectronic device comprising a light-emitting field transistor (LFET) with an organic semiconductor active layer and a ridge or rib waveguide structure:

wherein said ridge or rib waveguide structure forms a core of said waveguide;
wherein said ridge or rib waveguide structure comprises a material which has a higher refractive index than said organic semiconductor;
wherein said ridge or rib waveguide structure is confined entirely within the channel of the light-emitting field-effect transistor;
and
wherein said ridge or rib waveguide structure provides mode confinement in two dimensions within said LFET.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/127,456Filed 26 Nov 2009

Priority

GB 0821980.02 Dec 2008

Published

US 2011/0229073 A122 Sep 2011

Granted

9 Feb 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification17 codes

H01S 5/36
Structure or shape of the active region; Materials used for the active region: comprising organic materials
H01S 5/12
Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or…: the…
H01S 5/185
Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities: having only horizontal cavities, e.g. horizontal cavity…
H10K 10/484
Insulated gate field-effect transistors [IGFETs]: characterised by the channel regions

Optoelectronic devices

Life of this patent

Optoelectronic devices

Life of this patent

Abstract

Claims17