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US 8,891,573 B2Granted
6.1 angstrom III-V and II-VI semiconductor platform
AssigneeArizona Board of Regents
InventorYong-Hang Zhang
Life of this patent
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Abstract
Use of semiconductor materials having a lattice constant of within +/−1.6% of 6.1 angstroms facilitates improved semiconductor device performance and new semiconductor structures, for example integration of field-effect devices and optoelectronic devices on a single wafer. High-mobility channels are enabled, improving device performance.
Claims17
A semiconductor system, comprising:
- a field-effect transistor (FET);
- and
- a vertical-cavity surface-emitting laser (VCSEL) comprising an upper distributed Bragg reflector (DBR), an active region, and a bottom DBR,
- wherein the FET and VCSEL are formed on a single wafer, and
- wherein the top layer of the lower DBR is directly coupled to the drain of the FET.
2 more elements
A method for constructing a semiconductor system, comprising:
- forming, on a silicon substrate, a single-crystal buffer layer of ZnTe;
- forming, on the single-crystal buffer layer, an electronic switch;
- and
- forming, on the single-crystal buffer layer, an optoelectronic device.
1 more element
A semiconductor field-effect transistor (FET), comprising:
- a source;
- a drain;
- and
- a gate coupling the source and the drain and operable to modulate current therebetween, wherein a gate insulator of the FET comprises single crystal zinc telluride (ZnTe).
1 more element
Dependencies are inferred from the claim text.