H01J 2201/30484
Carbides
H01J2201/30484 (Carbides) appears on 16 US grants and 17 published applications in this corpus.
Search patents in H01J- Granted patents
- 16
- Published applications
- 17
- Assignees
- 14
- Inventors
- 42
- Latest grant
- 14 May 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2008 | 1 | 3 |
| 2009 | 0 | 2 |
| 2010 | 1 | 0 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 2 |
| 2014 | 1 | 0 |
| 2015 | 1 | 1 |
| 2016 | 3 | 1 |
| 2017 | 1 | 0 |
| 2018 | 2 | 1 |
| 2019 | 0 | 1 |
| 2020 | 1 | 1 |
| 2021 | 1 | 1 |
| 2022 | 1 | 1 |
| 2023 | 1 | 0 |
| 2024 | 1 | 1 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same14 May 2024US 11,984,294 B2National Institute for Materials Science
- Electron emitter and method of fabricating same27 Jun 2023US 11,688,579 B2ASML Netherlands B. V.
- Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same16 Aug 2022US 11,417,491 B2National Institute for Materials Science
- Electron emitter and method of fabricating same14 Dec 2021US 11,201,032 B2ASML Netherlands B. V.
- Electron emitter and method of fabricating same22 Sep 2020US 10,784,071 B2ASML Netherlands B. V.
- Silicon carbide based triode electron emitter and producing an electron beam with same23 Jul 2026US 2026/0213110 A1
- Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same7 Mar 2024US 2024/0079198 A1National Institute for Materials Science
- Electron emitter and method of fabricating same16 Jun 2022US 2022/0189725 A1ASML Netherlands B. V.
- Electron emitter and method of fabricating same13 May 2021US 2021/0142975 A1ASML Netherlands B. V.
- Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same10 Dec 2020US 2020/0388458 A1National Institute for Materials Science
Most cited
By later US patents
- Method of fabricating carbide and nitride nano electron emitters6US 7,465,210 B2Samsung Electronics Co., Ltd. · 2008
- Thermal-field type electron source composed of transition metal carbide material with artificial facet6US 9,240,301 B1Applied Physics Technologies, Inc. · 2016
- Field electron emission source4US 8,350,459 B2Hon Hai Precision Industry Co., Ltd. · 2013
- Thermionic-enhanced field emission electron source composed of transition metal carbide material with sharp emitter end-form2US 10,083,812 B1Applied Physics Technologies, Inc. · 2018
- Thermal-field type electron source composed of transition metal carbide material2US 9,490,098 B1Applied Physics Technologies, Inc. · 2016