Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same

2:

• The emitter according to claim 1, wherein a length in a lateral direction of the nanowire is 1 nm or more and 100 nm or less, and a length in a longitudinal direction of the nanowire is 500 nm or more and 30 μm or less.

3:

• The emitter according to claim 1, wherein the end through which the electrons are to be emitted has a tapered shape.

4:

• The emitter according to claim 1, wherein the end through which the electrons are to be emitted are terminated with hafnium (Hf) of the hafnium carbide single crystal.

5:

• The emitter according to claim 4, wherein the hafnium is combined with oxygen and/or nitrogen.

6:

• The emitter according to claim 5, wherein the end through which the electrons are to be emitted is coated with an oxide, nitride or oxynitride of the hafnium.

7:

• The emitter according to claim 6, wherein a thickness of the oxide, nitride or oxynitride of the hafnium is 1 nm or more and 5 nm or less.

8:

• An electron gun comprising at least an emitter, wherein the emitter is the emitter according to claim 1.

9:

• The electron gun according to claim 8, wherein
• the emitter further comprises a needle and a filament, and
• the nanowire is attached to the filament via the needle made of an element selected from the group consisting of tungsten (W), tantalum (Ta), platinum (Pt), rhenium (Re) and carbon (C).

10:

• The electron gun according to claim 8, wherein the electron gun is a cold cathode field emission electron gun or a Schottky electron gun.

11:

• An electronic device comprising an electron gun, wherein
• the electron gun is the electron gun according to claim 8,
• the electronic device is selected from the group consisting of scanning electron microscope, transmission electron microscope, scanning transmission electron microscope, Auger electron spectrometer, electron energy loss spectrometer, and energy dispersive electron spectrometer.

12:

• A method for manufacturing the emitter according to claim 1, comprising:
• a heating step of heating a nanowire made of hafnium carbide single crystal in vacuo, wherein a longitudinal direction of the nanowire corresponds to a <100> crystal direction of the hafnium carbide single crystal, and the end of the nanowire is heated under a vacuum of 1×10−10 Pa or more and 1×10−6 Pa or less in a temperature range of 300° C. or more and 1000° C. or less for 5 seconds or more and 30 minutes or less.

13:

• The method according to claim 12, wherein in the heating step, the end of the nanowire is heated in a temperature range of more than 600° C. and 1000° C. or less for 1 minute or more and 5 minutes or less.

14:

• The method according to claim 13, wherein in the heating step, the end of the nanowire is heated in a temperature range of 650° C. or more and 750° C. or less for 1 minute or more and 5 minutes or less.

15:

• The method according to claim 12, wherein in the heating step, the nanowire is attached to a filament, and the filament is energized and heated.

16:

• The method according to claim 12, further comprising, subsequent to the heating step, the step of introducing oxygen and/or nitrogen.

17:

• The method according to claim 16, wherein in the step of introducing the oxygen and/or nitrogen, oxygen and/or nitrogen is introduced until a pressure becomes greater than 1×10−6 Pa and 1×10−4 Pa or less.

18:

• The method according to claim 16, wherein in the step of introducing the oxygen and/or nitrogen, the end of the nanowire is heated in a temperature range of 650° C. or more and 850° C. or less for 3 minutes or more and 10 minutes or less.