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US 7,465,210 B2Granted
Method of fabricating carbide and nitride nano electron emitters
AssigneesThe Regents of the University of California, Samsung Electronics Co., Ltd.
InventorsDong-Wook Kim, Sungho Jin, In-Kyung Yoo, Li-Han Chen
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Abstract
This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emitter structures.
Claims20
A method of making an array of nanoscale carbide or nitride field emitters comprising:
- providing a substrate supporting an array of projecting carbon nanostructures;
- forming a carbide or nitride coating overlying the carbon nanostructures;
- and
- forming a layer of resistive material overlying the projecting carbon nanostructure and underlying the carbide or nitride coating,
- wherein forming the carbide coating includes depositing metal overlying the carbon nanostructures, and forming the nitride coating includes depositing metal overlying the carbon nanostructures and heating the metal on the carbon nanostructures in an ambient including nitrogen or a nitrogen compound to form metal nitride coating on the carbon nanostructures.
2 more elements
Dependencies are inferred from the claim text.