H01F 10/30
Characterised by the composition of the intermediate layers
Official title: characterised by the composition of the intermediate layers {, e.g. seed, buffer, template, diffusion preventing, cap layers (H01F10/06 and H01F10/32 take precedence)}
H01F10/30 (Characterised by the composition of the intermediate layers) appears on 302 US grants and 300 published applications in this corpus.
Search patents in H01F- Granted patents
- 302
- Published applications
- 300
- Assignees
- 118
- Inventors
- 626
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 4 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 5 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 6 |
| 2003 | 3 | 6 |
| 2004 | 12 | 15 |
| 2005 | 6 | 13 |
| 2006 | 9 | 23 |
| 2007 | 7 | 5 |
| 2008 | 13 | 14 |
| 2009 | 9 | 8 |
| 2010 | 8 | 6 |
| 2011 | 9 | 8 |
| 2012 | 6 | 8 |
| 2013 | 10 | 7 |
| 2014 | 10 | 12 |
| 2015 | 12 | 8 |
| 2016 | 6 | 3 |
| 2017 | 10 | 17 |
| 2018 | 5 | 20 |
| 2019 | 22 | 23 |
| 2020 | 21 | 23 |
| 2021 | 23 | 23 |
| 2022 | 26 | 19 |
| 2023 | 20 | 14 |
| 2024 | 7 | 9 |
| 2025 | 11 | 6 |
| 2026 | 6 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multilayer magnetic sheet28 Jul 2026US 12,695,016 B2Proterial, Ltd.
- MRAM fabrication and device17 Mar 2026US 12,581,863 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junction and magnetic memory device with amorphous metal boride and diffusion barrier10 Mar 2026US 12,575,331 B2Samsung Electronics Co., Ltd.
- Magnetic tunnel junction (MTJ) element and its fabrication process10 Mar 2026US 12,575,334 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Nitride diffusion barrier structure for spintronic applications10 Feb 2026US 12,550,623 B2Headway Technologies, Inc.
- Magnetic Nanodevice and Fabrication Method1 Oct 2026US 2026/0302031 A1The Regents of the University of Colorado, a body corporate
- Metal magnetic thin film13 Aug 2026US 2026/0237550 A1Murata Manufacturing Co., Ltd.
- MRAM Fabrication and Device25 Jun 2026US 2026/0182253 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junction (mtj) element and its fabrication process18 Jun 2026US 2026/0173766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetoresistive sensor layer structure for laser annealing18 Dec 2025US 2025/0386735 A1MultiDimension Technology Co., Ltd.
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer155US 8,422,176 B1Western Digital (Fremont), LLC · 2013
- Perpendicular magnetic recording transducer with AFM insertion layer152US 8,493,693 B1Western Digital (Fremont), LLC · 2013
- Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer152US 8,638,529 B1Western Digital (Fremont), LLC · 2014
- Method and system for providing a magnetic transducer having improved shield-to-shield spacing150US 8,537,502 B1Western Digital (Fremont), LLC · 2013