H01F 10/26
Thin magnetic films: characterised by the substrate or intermediate layers
Official title: characterised by the substrate or intermediate layers {(H01F10/06 and H01F10/32 take precedence)}
H01F10/26 (Thin magnetic films: characterised by the substrate or intermediate layers) appears on 505 US grants and 455 published applications in this corpus.
Search patents in H01F- Granted patents
- 505
- Published applications
- 455
- Assignees
- 211
- Inventors
- 1,114
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 5 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 5 | 0 |
| 1989 | 3 | 0 |
| 1990 | 7 | 0 |
| 1991 | 1 | 0 |
| 1992 | 8 | 0 |
| 1993 | 4 | 0 |
| 1994 | 3 | 0 |
| 1995 | 9 | 0 |
| 1996 | 11 | 0 |
| 1997 | 6 | 0 |
| 1998 | 8 | 0 |
| 1999 | 4 | 0 |
| 2000 | 10 | 0 |
| 2001 | 7 | 0 |
| 2002 | 4 | 16 |
| 2003 | 13 | 20 |
| 2004 | 18 | 22 |
| 2005 | 13 | 19 |
| 2006 | 15 | 34 |
| 2007 | 11 | 12 |
| 2008 | 17 | 24 |
| 2009 | 17 | 21 |
| 2010 | 14 | 15 |
| 2011 | 16 | 12 |
| 2012 | 11 | 9 |
| 2013 | 12 | 9 |
| 2014 | 13 | 18 |
| 2015 | 17 | 13 |
| 2016 | 10 | 9 |
| 2017 | 14 | 21 |
| 2018 | 7 | 30 |
| 2019 | 31 | 26 |
| 2020 | 27 | 29 |
| 2021 | 25 | 26 |
| 2022 | 27 | 22 |
| 2023 | 24 | 18 |
| 2024 | 10 | 14 |
| 2025 | 16 | 11 |
| 2026 | 9 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Magnetic particle and method18 Aug 2026US 12,712,106 B2Cambridge Enterprise Limited
- Laminate and method for manufacturing the same4 Aug 2026US 12,700,526 B2JX Advanced Metals Corporation
- Multilayer magnetic sheet28 Jul 2026US 12,695,016 B2Proterial, Ltd.
- MRAM fabrication and device17 Mar 2026US 12,581,863 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junction and magnetic memory device with amorphous metal boride and diffusion barrier10 Mar 2026US 12,575,331 B2Samsung Electronics Co., Ltd.
- Magnetic Nanodevice and Fabrication Method1 Oct 2026US 2026/0302031 A1The Regents of the University of Colorado, a body corporate
- Metal magnetic thin film13 Aug 2026US 2026/0237550 A1Murata Manufacturing Co., Ltd.
- MRAM Fabrication and Device25 Jun 2026US 2026/0182253 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junction (mtj) element and its fabrication process18 Jun 2026US 2026/0173766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetoresistance effect element7 May 2026US 2026/0130119 A1TDK Corporation
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer155US 8,422,176 B1Western Digital (Fremont), LLC · 2013
- Perpendicular magnetic recording transducer with AFM insertion layer152US 8,493,693 B1Western Digital (Fremont), LLC · 2013
- Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer152US 8,638,529 B1Western Digital (Fremont), LLC · 2014
- Method and system for providing a magnetic transducer having improved shield-to-shield spacing150US 8,537,502 B1Western Digital (Fremont), LLC · 2013