H01F 10/1936
Half-metallic
Official title: {Half-metallic, e.g. epitaxial CrO2 or NiMnSb films}
H01F10/1936 (Half-metallic) appears on 172 US grants and 203 published applications in this corpus.
Search patents in H01F- Granted patents
- 172
- Published applications
- 203
- Assignees
- 64
- Inventors
- 328
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 0 | 3 |
| 2003 | 2 | 5 |
| 2004 | 4 | 6 |
| 2005 | 3 | 5 |
| 2006 | 5 | 17 |
| 2007 | 6 | 14 |
| 2008 | 3 | 11 |
| 2009 | 18 | 12 |
| 2010 | 6 | 8 |
| 2011 | 12 | 4 |
| 2012 | 6 | 5 |
| 2013 | 6 | 9 |
| 2014 | 8 | 8 |
| 2015 | 9 | 4 |
| 2016 | 3 | 3 |
| 2017 | 5 | 3 |
| 2018 | 1 | 9 |
| 2019 | 10 | 17 |
| 2020 | 13 | 16 |
| 2021 | 14 | 10 |
| 2022 | 10 | 12 |
| 2023 | 12 | 7 |
| 2024 | 4 | 10 |
| 2025 | 6 | 4 |
| 2026 | 4 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Tetragonal half metallic heusler compounds26 May 2026US 12,642,007 B2International Business Machines Corporation
- Half metallic Heusler multilayers with perpendicular magnetic anisotropy17 Mar 2026US 12,581,868 B2International Business Machines Corporation
- Nitride diffusion barrier structure for spintronic applications10 Feb 2026US 12,550,623 B2Headway Technologies, Inc.
- Magnetic element and integrated device6 Jan 2026US 12,520,733 B2TDK Corporation
- Magnetic bubble memory from 4F lanthanide and ferromagnetic type materials23 Dec 2025US 12,505,857 B2Max-Planck-Gesellschaft Zur FöRderung Der Wissenschaften E. V.
- Magnetoresistance effect element, magnetic recording element, and high-frequency device17 Jul 2025US 2025/0232789 A1TDK Corporation
- Magnetoresistance effect element and heusler alloy26 Jun 2025US 2025/0210060 A1TDK Corporation
- Half metallic heusler multilayers with perpendicular magnetic anisotropy16 Jan 2025US 2025/0024756 A1International Business Machines Corporation
- Magnetoresistive element having high out-of-plane sensitivity2 Jan 2025US 2025/0004073 A1Allegro MicroSystems, LLC
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized heusler films17 Oct 2024US 2024/0349619 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Current switched magnetoresistive memory cell194US 6,744,086 B2NVE Corporation · 2004
- Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments106US 7,035,062 B1Seagate Technology LLC · 2006
- Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements101US 7,489,541 B2Grandis, Inc. · 2009
- Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same95US 7,936,595 B2Institute of Physics, Chinese Academy of Sciences · 2011
- Spin transistor and method of manufacturing the same46US 8,357,962 B2Kabushiki Kaisha Toshiba · 2013