Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments

A magnetoresistive sensor capable of sensing changes in magnetic fields from a memory media track, comprising:

• first and second electrodes;
• first and second free layers each having a magnetization orientation, the magnetization orientation of the layers being orthogonal to each other, and
• an insulation layer positioned between the first and second free layers;
• wherein changes in the magnetic fields of the memory media track create a change in the amount of current passing between the first and second electrodes and thereby the first and second free layers based upon the magnetization orientation of the first and second free layers relative to each other.

A magnetoresistive read sensor comprising:

• first and second electrodes, a stack positioned between the electrodes, the stack comprising a first free layer and a second free layer, and a tunneling barrier positioned between the first and second free layers;
• a biasing member positioned adjacent the stack to bias a first magnetization vector of the first free layer orthogonal to a second magnetization vector of the second free layer;
• and
• wherein a current is passed between the first and second free layers of the stack and the amount of current passing through the first and second free layer changes based upon the magnetization orientation of the first and second free layers relative to each other.