Current switched magnetoresistive memory cell
AssigneeNVE Corporation
InventorsJames M. Daughton, Arthur V. Pohm, Mark C. Tondra
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Abstract
A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film. A disruption layer is positioned on the other side of the memory film so that conduction electrons spins passing therefrom are substantially random in orientation. The magnitude of currents needed to operate the cell can be reduced using coincident thermal pulses to raise the cell temperature.
Claims59
A ferromagnetic thin-film based digital memory cell, said memory cell comprising:
- a substrate;
- and
- a bit structure formed of a plurality of layers provided in a selected sequence between a pair of electrodes in electrical contact therewith at opposite ends of said sequence and supported on said substrate comprising:
- a memory film of an anisotropic ferromagnetic material capable of conducting an electrical current therethrough;
- a source layer positioned on one side of said memory film capable of conducting an electrical current therethrough so that a majority of conduction electrons passing therefrom have a selected spin orientation;
- and
- a disruption layer positioned on another side of said memory film capable of conducting an electrical current therethrough so that conduction electrons spins passing therefrom are substantially random in orientation.
A ferromagnetic thin-film based digital memory cell, said memory cell comprising:
- a substrate;
- and
- a bit structure formed of a plurality of layers provided in a selected sequence between a pair of electrodes in electrical contact therewith at opposite ends of said sequence and supported on said substrate comprising:
- an electrically insulative intermediate layer;
- a source layer on one side of said insulative, intermediate layer capable of conducting an electrical current therethrough so that a majority of conduction electrons passing therefrom have a selected spin orientation;
- a memory film of an anisotropic ferromagnetic material on another side of said insulative intermediate layer capable of conducting an electrical current therethrough;
- and
- an antiparallel maintenance layer adjacent to a ferromagnetic material layer together on a side of at least one of said source layer and said memory film across from said intermediate layer.
A ferromagnetic thin-film based digital memory cell, said memory cell comprising:
- a substrate;
- and
- a bit structure formed of a plurality of layers provided in a selected sequence between a pair of electrodes in electrical contact therewith at opposite ends of said sequence and supported on said substrate comprising:
- an electrically conductive intermediate layer;
- a source layer on one side of said conductive intermediate layer capable of conducting an electrical current therethrough so that a majority of conduction electrons passing therefrom have a selected spin orientation;
- a memory film of an anisotropic ferromagnetic material on another side of said conductive intermediate layer capable of conducting an electrical current therethrough, and
- an antiparallel maintenance layer adjacent to a ferromagnetic material layer together on a side of at least one of said source layer and said memory film across from said intermediate layer.
Dependencies are inferred from the claim text.