Spin transistor and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsTakao Marukame, Mizue Ishikawa, Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito
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Abstract
A spin transistor includes a source electrode, a drain electrode, and a gate electrode on a semiconductor substrate. At least one of the source electrode and the drain electrode includes a semiconductor region and a magnetic layer. The semiconductor region is formed in the semiconductor substrate. The magnetic layer is formed on the semiconductor region, and contains a crystalline Heusler alloy containing at least one of cobalt (Co) and iron (Fe). The semiconductor region and the magnetic layer contain the same impurity element.
Claims16
A method of manufacturing a spin transistor comprising:
- forming a gate electrode on a semiconductor substrate;
- forming a source electrode on the semiconductor substrate;
- and
- forming a drain electrode on the semiconductor substrate,
- wherein at least one of the forming the source electrode and the forming the drain electrode includes
- forming a magnetic layer containing an impurity on the semiconductor substrate;
- and
- annealing the magnetic layer to form at least one of a source diffusion layer and a drain diffusion layer by diffusing the impurity contained in the magnetic layer into the semiconductor substrate, and change the magnetic layer into a Heusler alloy.
A method of manufacturing a spin transistor comprising:
- forming a gate electrode on a semiconductor substrate;
- forming a source electrode on the semiconductor substrate;
- and
- forming a drain electrode on the semiconductor substrate,
- wherein at least one of the forming the source electrode and the forming the drain electrode includes
- forming a magnetic layer containing an impurity on the semiconductor substrate;
- and
- annealing the magnetic layer to form at least one of a source diffusion layer and a drain diffusion layer by diffusing the impurity contained in the magnetic layer into the semiconductor substrate, and form one of a magnetic silicide layer and a magnetic germanide layer by performing one of silicidation and germanization of the magnetic layer,
- wherein the magnetic silicide layer has a spin polarization higher than that of the magnetic layer.
A method of manufacturing a spin transistor comprising:
- forming a gate electrode on a semiconductor substrate;
- forming a source electrode on the semiconductor substrate;
- and
- forming a drain electrode on the semiconductor substrate,
- wherein at least one of the forming the source electrode and the forming the drain electrode includes
- forming a magnetic layer containing an impurity on the semiconductor substrate;
- and
- annealing the magnetic layer to form a semiconductor region having a low resistance by diffusing the impurity contained in the magnetic layer into the semiconductor substrate, and change the magnetic layer into a Heusler alloy.
A method of manufacturing a spin transistor comprising:
- forming a gate electrode on a semiconductor substrate;
- forming a source electrode on the semiconductor substrate;
- and
- forming a drain electrode on the semiconductor substrate,
- wherein at least one of the forming the source electrode and the forming the drain electrode includes
- forming a magnetic layer containing at least one element of lithium (Li), phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi), boron (B), aluminum (Al), gallium (Ga), indium (In), magnesium (Mg), and beryllium (Be) on the semiconductor substrate;
- and
- annealing the magnetic layer to form a semiconductor region by diffusing at least said one element contained in the magnetic layer into the semiconductor substrate, and change the magnetic layer into a Heusler alloy.
Dependencies are inferred from the claim text.