Half metallic Heusler multilayers with perpendicular magnetic anisotropy
AssigneesInternational Business Machines Corporation, Samsung Electronics Co., Ltd.
InventorsMahesh Samant, Sergey Faleev, Panagiotis Charilaos Filippou, Chirag Garg, Jaewoo Jeong
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Abstract
A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.
Claims21
A magnetoresistive random-access memory cell, comprising:
- a templating layer comprising a binary alloy having an alternating layer lattice structure;
- a half metallic Heusler multilayer structure comprising a plurality of layers of two different Heusler compounds, at least one of which is half metallic, the half metallic Heusler multilayer structure being located outward of the templating layer and exhibiting perpendicular magnetic anisotropy (PMA);
- a tunnel barrier outward of the half metallic Heusler multilayer structure;
- and
- a magnetic layer outward of the tunnel barrier.
A magnetoresistive random-access memory array, comprising:
- a plurality of bit lines and a plurality of complementary bit lines forming a plurality of bit line-complementary bit line pairs;
- a plurality of word lines intersecting the plurality of bit line pairs at a plurality of cell locations;
- and
- a plurality of magnetoresistive random-access memory cells located at each of the plurality of cell locations, each of the magnetoresistive random-access memory cells being electrically connected to a corresponding bit line and selectively interconnected to a corresponding one of the complementary bit lines under control of a corresponding one of the word lines, each of the plurality of magnetoresistive random-access memory cells comprising:
- a templating layer comprising a binary alloy having an alternating layer lattice structure;
- a half metallic Heusler multilayer structure comprising a plurality of layers of two different Heusler compounds, at least one of which is half metallic, the half metallic Heusler multilayer structure being located outward of the templating layer and exhibiting perpendicular magnetic anisotropy (PMA);
- a tunnel barrier outward of the half metallic Heusler multilayer structure;
- and
- a magnetic layer outward of the tunnel barrier.
A magnetoresistive random-access memory cell, comprising:
- a magnetic layer;
- a tunnel barrier outward of the magnetic layer;
- a half metallic Heusler multilayer structure comprising a plurality of layers of two different Heusler compounds, at least one of which is half metallic, the half metallic Heusler multilayer structure being located outward of the tunnel barrier and exhibiting perpendicular magnetic anisotropy (PMA), wherein:
- the two different Heusler compounds are designated as “A” and “B”;
- the half metallic Heusler multilayer structure has at least one complete periodic substructure and no more than three periodic substructures, selected from the group consisting of 1×A/1×B, 2×A/1×B, 1×A/2×B, 2×A/2×B, 1×B/1×A, 2×B/1×A, 1×B/2×A, 2×B/2×A;
- and
- each single layer has a thickness of 1±0.1 unit cell and each double layer has a thickness of 2±0.2 unit cells.
Dependencies are inferred from the claim text.