H01F 10/123
Having a l10 crystallographic structure
Official title: {having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films}
H01F10/123 (Having a l10 crystallographic structure) appears on 192 US grants and 227 published applications in this corpus.
Search patents in H01F- Granted patents
- 192
- Published applications
- 227
- Assignees
- 94
- Inventors
- 440
- Latest grant
- 13 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 4 | 4 |
| 2002 | 4 | 6 |
| 2003 | 2 | 5 |
| 2004 | 5 | 11 |
| 2005 | 3 | 16 |
| 2006 | 13 | 15 |
| 2007 | 8 | 2 |
| 2008 | 4 | 3 |
| 2009 | 2 | 5 |
| 2010 | 3 | 7 |
| 2011 | 0 | 10 |
| 2012 | 10 | 15 |
| 2013 | 17 | 18 |
| 2014 | 14 | 11 |
| 2015 | 9 | 13 |
| 2016 | 17 | 15 |
| 2017 | 8 | 9 |
| 2018 | 7 | 12 |
| 2019 | 10 | 12 |
| 2020 | 16 | 11 |
| 2021 | 7 | 10 |
| 2022 | 8 | 5 |
| 2023 | 7 | 6 |
| 2024 | 3 | 4 |
| 2025 | 5 | 2 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Neuron device based on spin orbit torque13 Jan 2026US 12,524,659 B2Institute of Microelectronics, Chinese Academy of Sciences
- Magnetic bubble memory from 4F lanthanide and ferromagnetic type materials23 Dec 2025US 12,505,857 B2Max-Planck-Gesellschaft Zur FöRderung Der Wissenschaften E. V.
- Differentially programmable magnetic tunnel junction device and system including same25 Nov 2025US 12,484,457 B2Intel Corporation
- Flux-trapping magnetic films in superconducting circuits3 Jun 2025US 12,322,524 B2Northrop Grumman Systems Corporation
- Magnetic memory device6 May 2025US 12,295,268 B2Samsung Electronics Co., Ltd.
- Boron-Based and High-Entropy Magnetic Materials5 Jun 2025US 2025/0182963 A1Georgetown University
- Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide Thin Film20 Feb 2025US 2025/0062060 A1Tsinghua University
- Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation14 Nov 2024US 2024/0379270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ordered alloy ferromagnetic nanowire structure and method for producing same27 Jun 2024US 2024/0209494 A1Japan Science and Technology Agency
- Magneto-optical material and method for producing same29 Feb 2024US 2024/0069124 A1Research Institute For Electromagnetic Materials
Most cited
By later US patents
- High speed low power annular magnetic devices based on current induced spin-momentum transfer174US 7,307,876 B2New York University · 2007
- High speed low power magnetic devices based on current induced spin-momentum transfer161US 6,980,469 B2New York University · 2005
- Method for providing an improved hard bias structure153US 8,603,593 B1Western Digital (Fremont), LLC · 2013
- Method and system for providing an improved hard bias structure148US 8,270,126 B1Western Digital (Fremont), LLC · 2012
- High speed low power magnetic devices based on current induced spin-momentum transfer141US 7,170,778 B2New York University · 2007