Method for providing an improved hard bias structure

A method for providing a hard bias structure comprising:

• providing a seed layer for a hard bias layer, the seed layer having a seed layer lattice constant and a natural growth texture;
• depositing the hard bias layer for the hard bias structure on the seed layer, the natural growth texture corresponding to a texture for the hard bias layer, the hard bias layer having a bulk lattice constant;
• and
• wherein the step of providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer constant;
• wherein the step of depositing the hard bias layer further includes forming a second plasma of a second deposition gas configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant;
• wherein the hard bias layer includes a material having a hexagonal close-packed crystal structure having a lattice constant that is not more than fifteen percent different from a CoPt lattice constant.

A method for providing a hard bias structure comprising:

• providing a seed layer for a hard bias layer, the step of providing the seed layer including
• providing an amorphous Ta layer;
• and
• providing a W layer on the Ta layer, the W layer having a seed layer lattice constant and a (110) natural growth texture;
• and
• depositing the hard bias layer for the hard bias structure on the W layer in an Ar plasma, the hard bias layer including CoPt, the (110) natural growth texture corresponding to a (10 10) texture for the hard bias layer, the hard bias layer having a bulk lattice constant;
• wherein the step of providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer lattice constant, the first deposition gas being lighter than Ar if the bulk lattice constant is greater than the seed layer lattice constant;
• and
• wherein the Ar is lighter than the first deposition gas and is configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant.