Magnetic memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsByongguk Park, Jeong-Heon Park, Kyung-Jin Lee, Jeongchun Ryu
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Abstract
A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.
Claims20
A magnetic memory device comprising:
- a conductive line extending in a first direction;
- a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns;
- and
- a magnetic layer on a second surface of the conductive line, which is opposite to the first surface,
- wherein the magnetic layer includes magnetization components that have a magnetization in a direction which is parallel to the second surface and intersects the first direction, and
- wherein a length of the conductive line in the first direction is greater than a length of the barrier pattern in the first direction.
A magnetic memory device comprising:
- a conductive line extending in a first direction, the conductive line having a first surface and a second surface opposite to the first surface;
- a pinned magnetic pattern on the first surface;
- a free magnetic pattern between the conductive line and the pinned magnetic pattern;
- a barrier pattern between the free magnetic pattern and the pinned magnetic pattern;
- and
- a magnetic layer extending in the first direction on the second surface,
- wherein the magnetic layer has a resistivity less than that of the conductive line, and
- wherein a length of the conductive line in the first direction is greater than a length of the barrier pattern in the first direction.
A magnetic memory device comprising:
- a conductive line extending in a first direction;
- a plurality of magnetic tunnel junction structures arranged in the first direction on a first surface of the conductive line, wherein each of the plurality of magnetic tunnel junction structures comprises at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns;
- and
- a magnetic layer on a second surface of the conductive line, which is opposite to the first surface,
- wherein the magnetic layer vertically overlaps with the plurality of magnetic tunnel junction structures,
- wherein a length of the conductive line in the first direction is greater than a length of the barrier pattern in the first direction.
Dependencies are inferred from the claim text.