Neuron device based on spin orbit torque

A neuron device based on a spin orbit torque, the neuron device comprising:

• an antiferromagnetic pinning layer, a first ferromagnetic layer and a spin orbit coupling layer formed on a substrate in sequence;
• a free layer formed on the spin orbit coupling layer and moving a magnetic domain wall according to a spin orbit torque, the free layer having a first side facing toward the spin orbit coupling layer and a second side opposite to the first side;
• a tunneling layer formed on the free layer;
• a left pinning layer and a right pinning layer formed on the second side, and along one or more peripheral edges, of the free layer and having opposite magnetization directions;
• and
• a reference layer formed on the tunneling layer,
• wherein the free layer, the tunneling layer and the reference layer constitute a magnetic tunnel junction, and the magnetic tunnel junction is configured to read neuronal signals.