H01F 1/404
Of iii-v type
Official title: {of III-V type, e.g. In1-x Mnx As}
H01F1/404 (Of iii-v type) appears on 21 US grants and 22 published applications in this corpus.
Search patents in H01F- Granted patents
- 21
- Published applications
- 22
- Assignees
- 23
- Inventors
- 82
- Latest grant
- 18 Sep 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 0 |
| 2003 | 0 | 3 |
| 2004 | 0 | 3 |
| 2005 | 2 | 2 |
| 2006 | 2 | 3 |
| 2007 | 2 | 3 |
| 2008 | 2 | 3 |
| 2009 | 1 | 2 |
| 2010 | 1 | 1 |
| 2011 | 3 | 2 |
| 2012 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Spin transistor and method of operating the same18 Sep 2012US 8,269,293 B2Samsung Electronics Co., Ltd.
- Electronic devices based on current induced magnetization dynamics in single magnetic layers26 Jul 2011US 7,986,544 B2New York University
- Spin field effect transistor using half metal and method of manufacturing the same3 May 2011US 7,936,028 B2Samsung Electronics Co., Ltd.
- Single-charge tunnelling device22 Feb 2011US 7,893,426 B2Hitachi, Ltd.
- Antiferromagnetic half-metallic semiconductor and manufacturing method therefor7 Sep 2010US 7,790,585 B2Osaka University
- Single-charge tunneling device5 May 2011US 2011/0103138 A1
- Electronic devices based on current induced magnetization dynamics in single magnetic layers17 Feb 2011US 2011/0038198 A1New York University
- Spin transistor and method of operating the same28 Oct 2010US 2010/0271112 A1Samsung Electronics Co., Ltd.
- Antiferromagnetic half-metallic semiconductor and manufacturing method therefor10 Sep 2009US 2009/0224340 A1Osaka University
- Spin field effect transistor using half metal and method of manufacturing the same14 May 2009US 2009/0121267 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Electronic devices based on current induced magnetization dynamics in single magnetic layers102US 7,986,544 B2New York University · 2011
- Potential masking systems and methods for combinatorial library synthesis46US 6,468,806 B1Symyx Technologies, Inc. · 2002
- Magnetic body, magnetic device using the same, and method of manufacturing the same21US 7,470,925 B2Nippon Telegraph and Telephone Corporation · 2008
- Spin filter and a memory using such a spin filter19US 7,180,087 B1ETeCH AG · 2007
- Class of magnetic materials for solid state devices13US 5,294,287 AInternational Business Machines Corporation · 1994