Electronic devices based on current induced magnetization dynamics in single magnetic layers

A magnetic memory device capable of current induced single layer magnetic configuration switching, comprising:

• a nanopillar structure having a single magnetic layer including a nonuniform magnetization material of a first magnetization configuration which when traversed by a spin polarized current of a first polarity changes to a second magnetization configuration and exhibits a second electrical resistance value which is different from a first electrical resistance value exhibited by said magnetic layer prior to being traversed by said current, wherein the presence of one of said first electrical resistance value and said second electrical resistance value indicates an information element stored in said magnetic memory device, and wherein a change between said first electrical resistance value and said second electrical resistance value exhibits hysteretic characteristics.

A magnetic material oscillator, comprising:

• a single magnetic layer including a nonuniform magnetization material which when traversed by a spin polarized current of a predetermined current density range thereby results in a reorientation of the magnetic moments of the magnetic layer which takes place in a substantially oscillatory manner such that an electrical resistance value characteristic of said magnetic layer oscillates in a substantially regular manner.

A magnetic material frequency mixer, comprising:

• a single magnetic layer including a nonuniform magnetization material which when traversed by an oscillating spin polarized current of a predetermined current density range results in a reorientation of the magnetic moments of the magnetic layer which thereby takes place in a substantially oscillatory manner such that an electrical resistance value characteristic of said magnetic layer oscillates in a substantially regular manner, such that when a frequency of the oscillating spin polarized current is substantially equivalent to a frequency of the magnetic layer oscillation, an oscillating voltage will be developed by the magnetic layer, the oscillating voltage having a frequency which is the difference of the frequency of the oscillating spin polarized current and the frequency of the magnetic layer oscillation.