Antiferromagnetic half-metallic semiconductor and manufacturing method therefor
AssigneeOsaka University
InventorsHisazumi Akai, Masako Ogura
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Abstract
An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.
Claims11
An antiferromagnetic half-metallic semiconductor manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a number of d-electrons of less than or equal to five and a magnetic element with a number of d-electrons of more than or equal to five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.
A manufacturing method for an antiferromagnetic half-metallic semiconductor, comprising growing a semiconductor thin film on a substrate, and simultaneously adding two or more types of magnetic elements including a magnetic element with a number of d-electrons of less than five and a magnetic element with a number of d-electrons of more than five.
Dependencies are inferred from the claim text.