Class of magnetic materials for solid state devices
AssigneeInternational Business Machines Corporation
InventorsLeroy L. Chang, Leo Esaki, Hiro Munekata, Hideo Ohno, Stephan vonMolnar
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AssigneeInternational Business Machines Corporation
InventorsLeroy L. Chang, Leo Esaki, Hiro Munekata, Hideo Ohno, Stephan vonMolnar
Estimating the term…
A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn.sub.x As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.
A method for manufacturing a substance of the formula III-V or IV including as part of said substance a transition element or rare earth element present in an amount sufficient to change said substance from a paramagnetic state to a locally ordered magnetic state comprising depositing at least one element III and one element V, or at least one element IV and at least one transition element or at least one rare earth element onto a substrate at conditions such that said transition element or rare earth element that is deposited on said substrate is not in equilibrium with said substance wherein:
A method for manufacturing a substance of the Formula III-V including as part of said substance a transition element present in an amount sufficient to change said substance from a paramagnetic state to a locally ordered magnetic state comprising depositing at least one element III, at least one element V, at least one transition element onto a substrate at conditions such that said transition element that is deposited on said substrate is not in equilibrium with said substance wherein:
Dependencies are inferred from the claim text.