Back to results
US 8,269,293 B2Granted
Spin transistor and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Ha Hong, Sung-Hoon Lee, Jong-Seob Kim, Jai-Kwang Shin
Life of this patent
Estimating the term…
Abstract
Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on.
Claims29
A spin transistor comprising:
- a channel formed of a magnetic material configured to selectively pass a spin-polarized electron having a specific direction;
- a source formed of a magnetic material;
- a first tunnel barrier between the channel and the source;
- a drain;
- and
- a gate electrode configured to control a magnetization state of the channel to selectively pass the spin-polarized electron injected from the source into the channel, wherein the source includes,
- a ferromagnetic layer on the first tunnel barrier,
- an anti-ferromagnetic layer on the ferromagnetic layer, and
- a metal layer on the anti-ferromagnetic layer.
6 more elements
Dependencies are inferred from the claim text.