G11C 2211/5647
Multilevel memory with bit inversion arrangement
G11C2211/5647 (Multilevel memory with bit inversion arrangement) appears on 127 US grants and 118 published applications in this corpus.
Search patents in G11C- Granted patents
- 127
- Published applications
- 118
- Assignees
- 54
- Inventors
- 169
- Latest grant
- 18 Mar 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 7 | 0 |
| 2001 | 4 | 1 |
| 2002 | 2 | 1 |
| 2003 | 0 | 10 |
| 2004 | 10 | 6 |
| 2005 | 6 | 3 |
| 2006 | 2 | 2 |
| 2007 | 3 | 5 |
| 2008 | 5 | 12 |
| 2009 | 8 | 11 |
| 2010 | 9 | 10 |
| 2011 | 10 | 8 |
| 2012 | 6 | 7 |
| 2013 | 8 | 12 |
| 2014 | 13 | 7 |
| 2015 | 6 | 5 |
| 2016 | 5 | 5 |
| 2017 | 5 | 3 |
| 2018 | 4 | 1 |
| 2019 | 1 | 2 |
| 2020 | 1 | 3 |
| 2021 | 2 | 1 |
| 2022 | 2 | 2 |
| 2023 | 1 | 1 |
| 2024 | 1 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Magnetic disk apparatus and method18 Mar 2025US 12,254,221 B2Kabushiki Kaisha Toshiba
- Nonvolatile memory device and memory system including nonvolatile memory device18 Jun 2024US 12,013,754 B2Samsung Electronics Co., Ltd.
- Techniques for programming self-selecting memory5 Sep 2023US 11,749,360 B2Micron Technology, Inc.
- Dedicated commands for memory operations27 Sep 2022US 11,456,033 B2Micron Technology, Inc.
- Techniques for programming self-selecting memory1 Feb 2022US 11,238,945 B1Micron Technology, Inc.
- Magnetic disk apparatus and method28 Sep 2023US 2023/0305758 A1Kabushiki Kaisha Toshiba
- Techniques for programming self-selecting memory30 Jun 2022US 2022/0208291 A1Micron Technology, Inc.
- Nonvolatile memory device and memory system including nonvolatile memory device6 Jan 2022US 2022/0004457 A1Samsung Electronics Co., Ltd.
- Dedicated commands for memory operations14 Oct 2021US 2021/0319829 A1Micron Technology, Inc.
- Memory device and method of operating the same17 Sep 2020US 2020/0294596 A1SK hynix Inc.
Most cited
By later US patents
- Clock synchronized non-volatile memory device240US 6,801,452 B2Renesas Technology Corp. · 2004
- Programming flash memory using strict ordering of states102US 5,677,869 AIntel Corporation · 1997
- Non-volatile semiconductor memory device for storing multivalue data and readout/write-in method therefor59US 5,751,634 AKabushiki Kaisha Toshiba · 1998
- Nonvolatile memory device and refreshing method52US 5,889,698 AHitachi, Ltd. · 1999
- Memory write error correction circuit52US 8,456,926 B2Grandis, Inc. · 2013