G11C 2211/5613
Multilevel memory cell with additional gates, not being floating or control gates
G11C2211/5613 (Multilevel memory cell with additional gates, not being floating or control gates) appears on 43 US grants and 5 published applications in this corpus.
Search patents in G11C- Granted patents
- 43
- Published applications
- 5
- Assignees
- 17
- Inventors
- 20
- Latest grant
- 2 May 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 8 | 0 |
| 1999 | 5 | 0 |
| 2000 | 4 | 0 |
| 2001 | 1 | 1 |
| 2002 | 5 | 0 |
| 2003 | 2 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 2 |
| 2014 | 0 | 0 |
| 2015 | 2 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of operating flash memory unit2 May 2017US 9,640,252 B1Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Memory apparatus with gated phase-change memory cells21 Jul 2015US 9,087,574 B2International Business Machines Corporation
- Memory apparatus with gated phase-change memory cells7 Jul 2015US 9,076,517 B2International Business Machines Corporation
- Highly compact EPROM and flash EEPROM devices5 Jul 2005US 6,914,817 B2SanDisk Corporation
- Highly compact EPROM and flash EEPROM devices27 May 2003US 6,570,790 B1SanDisk Corporation
- Memory apparatus with gated phase-change memory cells5 Dec 2013US 2013/0322166 A1International Business Machines Corporation
- Memory apparatus with gated phase-change memory cells5 Dec 2013US 2013/0322168 A1International Business Machines Corporation
- Highly compact Eprom and flash EEprom devices3 Nov 2005US 2005/0243601 A1
- Highly compact Eprom and flash EEprom devices27 Nov 2003US 2003/0218920 A1SanDisk Corporation
- Nonvolatile memory cell and method for programming and/or verifying the same21 Jun 2001US 2001/0004325 A1Hyundai Electronics Industries Co., Ltd.
Most cited
By later US patents
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- Flash EEPROM memory systems having multistate storage cells579US 5,043,940 A1991
- Multi-state flash EEPROM system using incremental programing and erasing methods293US 5,293,560 A1994
- Flash EEPROM system cell array with more than two storage states per memory cell293US 5,434,825 A1995
- Highly compact EPROM and flash EEPROM devices273US 5,268,319 A1993