G11C 19/0825
Using a variable perpendicular magnetic field
Official title: {using a variable perpendicular magnetic field}
G11C19/0825 (Using a variable perpendicular magnetic field) appears on 20 US grants and 8 published applications in this corpus.
Search patents in G11C- Granted patents
- 20
- Published applications
- 8
- Assignees
- 14
- Inventors
- 47
- Latest grant
- 4 Jan 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 1 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 2 |
| 2018 | 0 | 1 |
| 2019 | 1 | 0 |
| 2020 | 0 | 2 |
| 2021 | 1 | 0 |
| 2022 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Magnetic memory4 Jan 2022US 11,217,628 B2Toshiba Memory Corporation
- Memory system for controlling magnetic memory15 Jun 2021US 11,037,643 B2Toshiba Memory Corporation
- Voltage-controlled resistive devices29 Oct 2019US 10,460,804 B2Massachusetts Institute of Technology
- Method for controlling magnetic multi-domain state3 Oct 2017US 9,779,836 B2Institute of Microelectronics, Chinese Academy of Sciences
- System and method for manipulating domain pinning and reversal in ferromagnetic materials15 Oct 2013US 8,558,333 B2The University of Chicago
- Magnetic memory24 Sep 2020US 2020/0303457 A1Toshiba Memory Corporation
- Memory system for controlling magnetic memory17 Sep 2020US 2020/0294610 A1Toshiba Memory Corporation
- Voltage-controlled resistive devices19 Apr 2018US 2018/0108412 A9Massachusetts Institute of Technology
- Voltage-controlled resistive devices31 Aug 2017US 2017/0249990 A1Massachusetts Institute of Technology
- Method for controlling magnetic multi-domain state30 Mar 2017US 2017/0092374 A1Institute of Microelectronics, Chinese Academy of Sciences
Most cited
By later US patents
- Solid state magnetic memory device12US 5,309,388 AHitachi, Ltd. · 1994
- Method of forming a serrated surface topography10US 4,016,062 AInternational Business Machines Corporation · 1977
- Wall topology storage system9US 3,940,750 AInternational Business Machines Corporation · 1976
- Magnetic memory, driving method thereof, and manufacturing method thereof8US 8,125,814 B2Industrial Technology Research Institute · 2012
- Mechanically actuated magnetocrystalline counter6US 3,961,316 AHughes Aircraft Company · 1976