Memory system for controlling magnetic memory

A memory system comprising:

• a magnetic memory including a first magnetic memory line including a plurality of layers, each of the layers being capable of storing a magnetic domain;
• and
• a controller which controls the magnetic memory, wherein
• the magnetic memory is configured to:
• put a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetization direction of a magnetic domain stored a first layer located on one end side of the first magnetic memory line, into the first layer, on the basis of a value of first data received from the controller and the magnetization direction of the magnetic domain stored in the first layer, such that a magnetic domains stored in each layer of the first magnetic memory line is moved by one layer in a first direction from the one end side to another end side of the first magnetic memory line;
• when receiving a first command from the controller, put an additional magnetic domain having a magnetization direction which is opposite to the magnetization direction of the first magnetic domain, into the first layer, such that the magnetic domain stored in each layer of the first magnetic memory line is moved by one layer in the first direction;
• when receiving a second command from the controller, read the additional magnetic domain and the first magnetic domain by moving the magnetic domain stored in each layer of the first magnetic memory line by two layers in a second direction from the other end side to the one end side of the first magnetic memory line;
• determine the magnetization direction of the first magnetic domain, on the basis of the read additional magnetic domain and the read first magnetic domain;
• and
• write back the first magnetic domain having the determined magnetization direction to the first layer such that the magnetic domains stored in each layer of the first magnetic memory line is moved by one layer in the first direction.

A memory system comprising:

• a magnetic memory including a first magnetic memory line including a plurality of layers, each of the layers being capable of storing a magnetic domain;
• and
• a controller which controls the magnetic memory, wherein
• the magnetic memory is configured to:
• put a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetization direction of a magnetic domain stored in a first layer located on one end side of the first magnetic memory line, into the first layer, on the basis of a value of first data received from the controller and the magnetization direction of the magnetic domain stored in the first layer, such that a magnetic domain stored in each layer of the first magnetic memory line is moved by one layer in a first direction from the one end side to another end side of the first magnetic memory line;
• when receiving a first command from the controller, put an initial magnetic domain having a predetermined fixed magnetization direction into the first layer of the first magnetic memory line, such that the magnetic domain stored in each layer of the first magnetic memory line is moved by one layer in the first direction;
• and
• put a second magnetic domain having a magnetization direction which is the same as or opposite to the fixed magnetization direction, into the first layer, on the basis of a value of second data received from the controller and a magnetization direction which is same as the fixed magnetization direction, such that the magnetic domain stored in each layer of the first magnetic memory line is moved by one layer in the first direction.

A memory system comprising:

• a magnetic memory including a first magnetic memory line including a plurality layers, each of layers being capable of storing a magnetic domain;
• and
• a controller which controls the magnetic memory, wherein
• the magnetic memory is configured to:
• put a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetization direction of a magnetic domain stored in a first layer located on one end side of the first magnetic memory line, into the first layer, on the basis of a value of first data received from the controller and the magnetization direction of the magnetic domain of the first layer, such that a magnetic domain stored in each layer of the first magnetic memory line is moved by one layer in a first direction from the one end side to another end side of the first magnetic memory line;
• when receiving a third command from the controller, copy a content of a first latch circuit storing magnetic data indicative of the magnetization direction of the first magnetic domain to a second latch circuit;
• and
• when receiving a program command from the controller, determine the magnetization direction of the first magnetic domain put into the first layer, on the basis of a content of the second latch circuit, and put a second magnetic domain having a magnetization direction which is the same as or opposite to the determined magnetization direction of the first magnetic domain, into the first layer, on the basis of a value of second data received from the controller and the determined magnetization direction of the first magnetic domain, such that the magnetic domain stored in each layer of the first magnetic memory line is moved by one layer in the first direction.