Solid state magnetic memory device
AssigneeHitachi, Ltd.
InventorsYooji Maruyama, Ryo Imura, Kazuhisa Fujimoto
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Abstract
In a solid state magnetic memory device wherein the information storing region of a Bloch line memory device using Bloch lines generated in magnetic domain walls as information carriers is covered with a magnetic material film having stripe domains perpendicular to the magnetic domain walls, the information storing position is determined by the stripe domains and a memory density of more than several tens giga bits per cm.sup.2 can be realized.
Claims15
In a Bloch line memory device using Block lines generated in magnetic domain walls of magnetic domains generated in a ferromagnetic material as information carriers, a solid state magnetic memory device comprising a ferromagnetic material film covering said ferromagnetic material film wherein an information storing region comprising said information carriers is covered with said magnetic material film having biaxial magnetic anisotropies in parallel with and perpendicular to the film surface and the information storing position of said Block lines in said magnetic domain walls is determined by a spontaneous magnetic domain in said magnetic material film.
A solid state magnetic memory device comprising an information storing region using Bloch lines formed in magnetic domain walls around magnetic domains generated in a ferromagnetic material as information carriers, a writing section for writing information into the information storing region, a reading section for reading information from said information storing region, and a propagation section for propagating information to the outside from the reading section, wherein said information storing region is covered with a magnetic material film and the Bloch line information storing position in said magnetic domain walls is determined by a magnetic domain which is spontaneously formed in the magnetic material film.
Dependencies are inferred from the claim text.