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US 2018/0108412 A9Published application
Voltage-controlled resistive devices
AssigneeMassachusetts Institute of Technology
InventorsUwe Bauer, Geoffrey S.D. Beach
Life of this patent
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Abstract
Systems, methods, and apparatus are provided for tuning a memristive property of a device. The device (500) includes a layer of a dielectric material (507) disposed over and forming an interface with a layer of an electrically conductive material (506), and a gate electrode (508) disposed over the dielectric material. The dielectric material layer includes at least one ionic species (302) having a high ion mobility. The electrically conductive material is configured such that a potential difference applied to the device can cause the at least one ionic species to migrate reversibly across the interface into or out of the electrically conductive material layer, to modify the resistive state of the electrically conductive material layer.
Claims26
A memristive element comprising:
- a conductive material layer disposed in a x-y plane, the conductive material layer being configured to reversibly uptake an amount of at least one ionic species;
- a first electrode coupled proximate to a first end of the conductive material layer;
- a second electrode coupled proximate to a second end of the conductive material layer, opposite to the first end;
- a gate dielectric layer disposed over the conductive material layer, the gate dielectric layer being configured to supply to, or receive from, the conductive material layer, an amount of the at least one ionic species;
- and
- a gate electrode layer disposed over, and in electrical communication with, the gate dielectric material layer;
- an inert metal underlayer disposed in electrical communication with the conductive material layer;
- the gate electrode layer, the gate dielectric layer, and the conductive material layer being configured such that:
- a first potential difference applied in a first direction between the gate electrode layer and the conductive material layer modifies a proportionate amount of the at least one ionic species in a portion of the conductive material layer to generate a first memristive state comprising a first lateral resistive state between the first electrode and the second electrode;
- a second potential difference applied in a second direction between the gate electrode layer and the conductive material layer modifies a proportionate amount of the at least one ionic species in a portion of the conductive material layer to generate a second memristive state comprising a second lateral resistive state between the first electrode and the second electrode that is different from the first lateral resistive state;
- and
- the memristive element persists in the first memristive state or the second memristive state in response to discontinuance of the first potential difference or the second potential difference, respectively.
9 more elements
(canceled)
An apparatus comprising:
- a conductive material layer disposed on a substrate;
- an inert metal layer disposed in electrical contact with the conductive material layer;
- first and
- second electrodes disposed in contact with the conductive material layer;
- a gate dielectric material layer comprising at least one ionic species, the gate dielectric material layer being electrically in contact with the conductive material layer;
- and
- a gate electrode disposed in electrical contact with the gate dielectric material layer.
4 more elements
A method of operating a memristive device, the method comprising:
- applying a potential difference at a region of a gate electrode and a transition metal layer of a memristive device, the memristive device comprising:
- the transition metal layer disposed in a x-y plane, the transition metal layer having a first lateral dimension in the x-direction and being configured to reversibly uptake an amount of at least one ionic species;
- a first electrode coupled proximate to a first end of the transition metal layer;
- a second electrode coupled proximate to a second end of the transition metal layer, opposite to the first end;
- an inert metal underlayer disposed in electrical communication with the transition metal layer;
- a gate oxide dielectric layer comprising a rare earth oxide or a transition metal oxide, the gate oxide dielectric layer being disposed over the transition metal layer, the gate oxide dielectric layer having a second lateral dimension in the x-direction that is smaller than the first lateral dimension, and the gate oxide dielectric layer being configured to supply to, or receive from, the transition metal layer an amount of the at least one ionic species;
- and
- the gate electrode layer disposed over, and in electrical communication with, the gate oxide dielectric material layer;
- measuring a lateral resistive state between the first electrode and the second electrode;
- wherein the gate electrode layer, the gate oxide dielectric layer, and the transition metal layer are configured such that:
- the measuring indicates a first vertical resistive state and a first lateral resistive state in response to applying a first potential difference in a first direction;
- and
- the measuring indicates a second vertical resistive state that is different from the first vertical resistive state and a second lateral resistive state that is different from the first lateral resistive state in response to applying a second potential difference in a second direction that is opposite to the first direction.
10 more elements
Dependencies are inferred from the claim text.