G11B 5/378
Integrated structures
Official title: {Integrated structures}
G11B5/378 (Integrated structures) appears on 46 US grants and 27 published applications in this corpus.
Search patents in G11B- Granted patents
- 46
- Published applications
- 27
- Assignees
- 17
- Inventors
- 78
- Latest grant
- 23 Oct 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 0 |
| 2002 | 4 | 1 |
| 2003 | 0 | 0 |
| 2004 | 5 | 9 |
| 2005 | 5 | 9 |
| 2006 | 7 | 3 |
| 2007 | 6 | 2 |
| 2008 | 1 | 2 |
| 2009 | 2 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Magnetic sensor, magnetic head, and magnetic memory by using spin Hall devices23 Oct 2012US 8,295,006 B2Hitachi, Ltd.
- Spin memory with write pulse29 Sep 2009US 7,596,018 B2Seagate Technology Int'l
- Multi-bit spin memory4 Aug 2009US 7,570,510 B2Seagate Technology International
- Spin based memory coupled to CMOS amplifier4 Mar 2008US 7,339,819 B2Seagate Technology LLC
- Spin based electronic device18 Dec 2007US 7,309,888 B2Seagate Technology LLC
- Magnetic sensor, magnetic head, and magnetic memory by using spin hall devices25 Jun 2009US 2009/0161265 A1Hitachi, Ltd.
- Multi-Bit Spin Memory28 Feb 2008US 2008/0049489 A1Seagate Technology International
- Spin Memory with Write Pulse28 Feb 2008US 2008/0049492 A1Seagate Technology Int'l
- Spin Based Memory Coupled to CMOS Amplifier6 Sep 2007US 2007/0206407 A1Seagate Technology LLC
- Spin Based Magnetic Sensor30 Aug 2007US 2007/0201268 A1Seagate Technology LLC
Most cited
By later US patents
- Magnetic spin injected field effect transistor and method of operation245US 5,654,566 A1997
- Magnetic spin transistor device, logic gate & method of operation149US 5,629,549 A1997
- Hall sensor with integrated pole pieces129US 4,772,929 ASprague Electric Company · 1988
- High density and high speed magneto-electronic logic family126US 6,140,838 A2000
- Hybrid hall effect device and method of operation115US 5,652,445 A1997