Spin memory with write pulse
AssigneeSeagate Technology Int'l
InventorMark B. Johnson
Life of this patent
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Abstract
An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic state of such cell is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel. To facilitate writing, the cell is adapted carry at least a portion of a write pulse.
Claims23
An electron spin-based memory cell comprising:
- a first ferromagnetic layer which has a changeable magnetization state;
- a second ferromagnetic layer with a fixed magnetization state;
- wherein the electron spin-based memory cell has a non-volatile logic state that is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel;
- further wherein the electron spin-based memory cell is adapted to carry at least a portion of a write pulse associated with a switching field that is applied to the cell for changing said non-volatile logic state.
An electron spin-based memory cell situated on silicon substrate comprising:
- a first ferromagnetic layer which has a changeable magnetization state;
- a second ferromagnetic layer with a fixed magnetization state;
- wherein the electron spin-based cell has a non-volatile logic state which is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel;
- further wherein the electron spin-based is adapted to carry at least a portion of a write pulse associated with a switching field applied to the cell;
- a semiconductor isolation element coupled to the electron spin-based memory cell adapted to isolate data stored in the cell, which isolation element includes a transistor situated in the silicon substrate.
A magnetoelectronic memory cell comprising:
- an electron spin-based memory element situated on a silicon based substrate;
- said electron spin-based memory element including:
- i) a first ferromagnetic layer with a changeable magnetization state;
- ii) a second ferromagnetic layer with a non-changeable magnetization state;
- iii) a low transmission barrier interface coupled to at least said first ferromagnetic layer;
- further wherein the electron spin-based memory element is adapted to carry at least a portion of a write pulse associated with a switching field applied to the cell.
Dependencies are inferred from the claim text.