G01N 2021/8477
Investigating crystals
Official title: {Investigating crystals, e.g. liquid crystals}
G01N2021/8477 (Investigating crystals) appears on 85 US grants and 108 published applications in this corpus.
Search patents in G01N- Granted patents
- 85
- Published applications
- 108
- Assignees
- 89
- Inventors
- 286
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 2 |
| 2005 | 1 | 1 |
| 2006 | 2 | 2 |
| 2007 | 2 | 3 |
| 2008 | 1 | 4 |
| 2009 | 0 | 1 |
| 2010 | 2 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 0 | 6 |
| 2014 | 3 | 5 |
| 2015 | 3 | 3 |
| 2016 | 4 | 3 |
| 2017 | 4 | 7 |
| 2018 | 9 | 9 |
| 2019 | 6 | 8 |
| 2020 | 4 | 8 |
| 2021 | 5 | 7 |
| 2022 | 8 | 7 |
| 2023 | 2 | 8 |
| 2024 | 6 | 7 |
| 2025 | 5 | 8 |
| 2026 | 6 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of evaluating silicon single-crystal ingot, method of evaluating silicon epitaxial wafer, method of manufacturing silicon epitaxial wafer, and method of evaluating silicon mirror polished wafer23 Jun 2026US 12,663,383 B2Sumco Corporation
- Defect inspection apparatus and defect inspection method17 Mar 2026US 12,578,281 B2Lasertec Corporation
- Silicon wafer defect inspection method and silicon wafer defect inspection system24 Feb 2026US 12,560,554 B2Sumco Corporation
- System for determining evaporation endpoint by image recognition in evaporation and crystallization process of ammonia-nitrogen wastewater24 Feb 2026US 12,561,994 B2Dongjiang Environmental Company Limited
- Method and apparatus for determining crystallographic orientation on crystalline surfaces17 Feb 2026US 12,553,827 B2Nanyang Technological University
- Defect inspection apparatus and defect inspection method2 Jul 2026US 2026/0185945 A1Lasertec Corporation
- Method for inspecting gallium nitride based semiconductor film, method for manufacturing gallium nitride based semiconductor device comprising the same, and layered structure used therefor25 Jun 2026US 2026/0182264 A1Japan Display Inc.
- Systems and Methods For Voltage Contrast Imaging Using Photoreflectance Microscopy11 Jun 2026US 2026/0160704 A1
- Optical inspection device21 May 2026US 2026/0140063 A1MLMTEK Co., Ltd.
- Method to measure light loss of anisotropic crystal substrate29 Jan 2026US 2026/0029329 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Defect mapping system28US 5,406,367 AMidwest Research Institute · 1995
- Method and apparatus for measuring size of particle or defect27US 5,471,298 AMitsui Minings & Melting Co., Ltd. · 1995
- System for characterizing semiconductor materials and photovoltaic device26US 5,581,346 AMidwest Research Institute · 1996
- Apparatus and methods for probing a material as a function of depth using depth-dependent second harmonic generation18US 10,371,668 B2Vanderbilt University · 2019
- Optical measuring apparatus17US 6,320,652 B1Minolta Co., Ltd. · 2001