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US 12,560,554 B2Granted
Silicon wafer defect inspection method and silicon wafer defect inspection system
AssigneeSumco Corporation
InventorsNaoyuki Wada, Takehiro Tsunemori
Life of this patent
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Abstract
In a side view, when an angle θ1 formed between the light axis of light incident on a surface of a silicon wafer and the surface (or an imaginary plane corresponding to the surface) is 67° to 78° and an angle formed between the surface of the silicon wafer (or an imaginary plane corresponding to the surface) and the detection optical axis of a photodetector is θ2, θ1−θ2 is −6° to −1° or 1° to 6°.
Claims2
A silicon wafer defect inspection method comprising:
- irradiating a surface of a silicon wafer with light from a light source;
- and
- detecting light reflected off the surface using a photodetector,
- wherein in a side view of the silicon wafer, when an angle θ1 formed between a light axis of light incident on the surface of the silicon wafer and the surface is 67° to 78° and an angle formed between the surface of the silicon wafer and a detection optical axis of the photodetector is θ2, θ1−θ2 is one of −6° to −1° and 1° to 6°.
1 more element
A silicon wafer defect inspection system, comprising:
- a light source enabling irradiation of a surface of a silicon wafer with light;
- and
- a photodetector that detects light reflected off the surface,
- wherein in a side view corresponding to a side of the silicon wafer, when an angle θ1 formed between a light axis of light incident on the surface of the silicon wafer and an imaginary plane corresponding to the surface is 67° to 78° and an angle formed between the imaginary plane corresponding to the surface of the silicon wafer and a detection optical axis of the photodetector is θ2, θ1−θ2 is one of −6° to −1° and 1° to 6°.
1 more element
Dependencies are inferred from the claim text.