C30B 21/04
Unidirectional solidification of eutectic materials: by zone-melting
Official title: by zone-melting
C30B21/04 (Unidirectional solidification of eutectic materials: by zone-melting) appears on 19 US grants and 5 published applications in this corpus.
Search patents in C30B- Granted patents
- 19
- Published applications
- 5
- Assignees
- 8
- Inventors
- 23
- Latest grant
- 25 Feb 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 5 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 2 | 1 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- TiAl intermetallic compound single crystal material and preparation method therefor25 Feb 2020US 10,570,531 B2Nanjing University of Science and Technology
- Single crystal CVD synthetic diamond material16 Feb 2016US 9,260,797 B2Element Six Limited
- Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same5 Aug 2014US 8,795,624 B2Nippon Steel & Sumitomo Metal Corporation
- Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same18 Mar 2014US 8,673,254 B2Nippon Steel & Sumitomo Metal Corporation
- Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same15 May 2012US 8,178,389 B2Nippon Steel Corporation
- Tial intermetallic compound single crystal material and preparation method therefor21 Sep 2017US 2017/0268127 A1Nanjing University of Science and Technology
- Single crystal cvd synthetic diamond material13 Nov 2014US 2014/0335339 A1Element Six Technologies Limited
- Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same28 Jul 2011US 2011/0180765 A1Nippon Steel & Sumitomo Metal Corporation
- Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same17 Jun 2010US 2010/0147212 A1Nippon Steel Corporation
- Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carbide Wafer and Method of Manufacturing the Same15 Nov 2007US 2007/0262322 A1Nippon Steel Corporation
Most cited
By later US patents
- Method for making solid state device utilizing ion implantation techniques58US 5,082,793 A1992
- Solid-state device38US 4,371,406 A1983
- Method of making active solid state devices34US 4,690,714 A1987
- Internal zone growth method for producing metal oxide metal eutectic composites13US 4,231,796 AThe United States of America as represented by the United States Department of Energy · 1980
- Method for making solid-state device utilizing isolation grooves13US 4,946,800 A1990