Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same

A method for manufacturing a monocrystalline silicon carbide comprising a step of:

• growing a monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method, wherein the sublimation material includes a solid material containing a dopant element, and wherein the solid material containing the dopant element can reduce the specific surface to 0.5 m2/g or less at a temperature of 2400° C. or less.

A method for forming a monocrystalline silicon carbide (SiC) on a seed crystal of monocrystalline SiC by sublimation-re-crystallizing a sublimation material under reduced pressure of an inert gas atmosphere, wherein the sublimation material includes SiC and solid material containing vanadium as a dopant element which ranges from 0.001 to 1.0 weigh % of SiC in terms of vanadium comprising steps of:

• (a) treating the vanadium carbide as the dopant so as to adjust a specific surface of the vanadium carbide to 0.001 m2/g or more and 0.5 m2/g or less, and
• (b) sublimation-re-crystallizing the sublimation material to form the monocrystalline SiC on the seed crystal of monocrystalline SiC.