Ommic
Limeil-Brevannes, FR· latest recorded location
OMMIC is named on 2 US grants and 4 published applications in this corpus. Its most frequent classification is H10P (Generic processes or apparatus for the manufacture or treatment of devices covered).
- Granted patents
- 2
- Published applications
- 4
- Inventors
- 9
- Granted in 2026 so far
- 0
- Most recent grant
- 13 Dec 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 0 |
By publication year.
Technology areas
Share of 6 documents
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered5
- H10DInorganic electric semiconductor devices3
- B24BMachines, devices, or processes for grinding or polishing1
- B82YSpecific uses or applications of nanostructures1
- C30BSingle-crystal growth1
- H01SDevices using the process of light amplification by stimulated emission of radiation1
- H10HInorganic light-emitting semiconductor devices having potential barriers1
Recent patents
- Process for separating a plate into individual components13 Dec 2022US 11,527,440 B2
- Heterojunction field-effect transistor having germanium-doped source and drain regions2 Jul 2019US 10,340,376 B2
- Process for separating a plate into individual components4 Nov 2021US 2021/0343593 A1
- Heterojunction field-effect transistor30 Mar 2017US 2017/0092751 A1
- Method for manufacturing a thick eptaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method6 Nov 2014US 2014/0327013 A1
- Hand-Held Power Tool20 Mar 2008US 2008/0070487 A1
Most cited
By later US patents
None of its patents has been cited by a later US patent yet.