Y10T 428/1136
Single film
Y10T428/1136 (Single film) appears on 24 US grants and 14 published applications in this corpus.
Search patents in Y10T- Granted patents
- 24
- Published applications
- 14
- Assignees
- 19
- Inventors
- 53
- Latest grant
- 21 Feb 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 1 |
| 2009 | 0 | 3 |
| 2010 | 0 | 0 |
| 2011 | 3 | 1 |
| 2012 | 2 | 3 |
| 2013 | 2 | 0 |
| 2014 | 2 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 1 |
| 2020 | 0 | 1 |
| 2021 | 1 | 1 |
| 2022 | 1 | 0 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Fe—Co—Al alloy magnetic thin film21 Feb 2023US 11,585,013 B2TDK Corporation
- Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator23 Aug 2022US 11,422,211 B2TDK Corporation
- Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator16 Feb 2021US 10,921,392 B2TDK Corporation
- Reader structure with canted pinning29 Sep 2015US 9,147,410 B2Seagate Technology LLC
- Ferromagnetic graphenes and spin valve devices including the same25 Nov 2014US 8,895,161 B2Samsung Electronics Co., Ltd.
- Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator3 Jun 2021US 2021/0165058 A1TDK Corporation
- Fe-co-al alloy magnetic thin film5 Nov 2020US 2020/0347516 A1TDK Corporation
- Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator28 Mar 2019US 2019/0094315 A1TDK Corporation
- Reader structure19 Mar 2015US 2015/0077882 A1Seagate Technology LLC
- Ferromagnetic graphenes and spin valve devices including the same6 Dec 2012US 2012/0308846 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications93US 8,064,244 B2Kabushiki Kaisha Toshiba · 2011
- Arrays of semi-metallic bismuth nanowires and fabrication techniques therefor50US 6,187,165 B1The John Hopkins University · 2001
- Magnetoresistive multilayer film24US 5,895,727 AAlps Electric Co., Ltd. · 1999
- Magnetoresistive materials23US 5,858,125 AAlps Electric Co., Ltd. · 1999
- Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same23US 8,057,925 B2MagIC Technologies, Inc. · 2011