Magnetoresistive multilayer film

A magnetoresistive multilayer film comprising first thin films alternately laminated with second thin films,

• each of the first thin films comprising a magnetoresistive material having a structure in which a plurality of clusters are surrounded by a crystal phase including at least one of Cu and Ag, each of the clusters having a grain size of 20 nm or less and comprising an amorphous phase containing at least one ferromagnetic metal element T selected from the group consisting of Fe, Co and Ni, and at least one element M selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mo and W,
• each of the second thin films comprising at least one of Cu and Ag;
• wherein each of the first thin films satisfies the following composition:
• (T.sub.x Q.sub.1-x).sub.100 M.sub.a ;
• wherein Q indicates Cu and/or Ag;
• and
• wherein the composition satisfies the following relations:
• 0.2.ltoreq.x.ltoreq.0.9, where x is a value obtained by dividing a content of element T by a total amount of content of elements T and Q;
• and
• 0.5.ltoreq.a.ltoreq.8, where a is in atomic %.